• DocumentCode
    812284
  • Title

    Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high fmax

  • Author

    Bhattacharya, U. ; Mondry, M.J. ; Hurtz, G. ; Tan, I.-H. ; Pullela, R. ; Reddy, M. ; Guthrie, J. ; Rodwell, M.J.W. ; Bowers, J.E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    16
  • Issue
    8
  • fYear
    1995
  • Firstpage
    357
  • Lastpage
    359
  • Abstract
    Unlike normal heterojunction bipolar transistors (HBT´s), transferred substrate Schottky-collector HBT´s (SCHBT´s) exhibit substantial increases in fmax as the emitter and collector stripes are scaled to deep submicron dimensions. First generation InAlAs/InGaAs SCHBT´s with aligned 1-μm emitter and collector stripes have been fabricated.
  • Keywords
    III-V semiconductors; Schottky barriers; aluminium compounds; flip-chip devices; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor technology; 1 micron; InAlAs-InGaAs; SCHBT; collector stripes; deep submicron dimensions; emitter stripes; scaling laws; transferred substrate Schottky-collector HBTs; Analog-digital conversion; Bandwidth; Bipolar transistors; Capacitance; Cutoff frequency; Electrons; Flip chip; Heterojunction bipolar transistors; Substrates; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.400737
  • Filename
    400737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=812284