Polysilicon Thin Film-Transistors With Uniform and Reliable Performance Using Solution-Based Metal-Induced Crystallization

Author

Zhang, Bo ; Meng, Zhiguo ; Zhao, Shuyun ; Wong, Man ; Kwok, Hoi-Sing

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol.

Volume

54

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

1244

Lastpage

1248

Abstract

The authors studied electrical characteristics of p-channel polycrystalline silicon thin-film transistors (TFT) fabricated by solution-based metal-induced crystallization (SMIC). In particular, the effect of annealing conditions was systematically investigated. The current-voltage characteristics show that the performance of TFTs was dominated by the SMIC process rather than the annealing temperature up to 630 degC. All the devices exhibited good uniformity after annealing. The effects of gate stress and self-heating stress were also studied. The device performance was not affected by both stresses for all devices, p-channel SMIC poly-Si TFT has high performance, good uniformity, and satisfactory reliability with a process temperature < 600 degC

Keywords

annealing; crystallisation; internal stresses; semiconductor device reliability; thin film transistors; 630 C; gate stress; metal-induced crystallization; self-heating stress; semiconductor device reliability; thin-film transistors; Annealing; Crystallization; Glass; Microwave integrated circuits; Nickel; Silicon; Stress; Substrates; Temperature; Thin film transistors; Annealing; metal-induced crystallization (MIC); polycrystalline silicon thin film-transistor (TFT); reliability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.893215

Filename

4160145