• DocumentCode
    812298
  • Title

    Development of an interactive design environment for heterostructure and quantum-well devices

  • Author

    Frensley, W.R.

  • Author_Institution
    Texas Univ., Richardson, TX
  • Volume
    38
  • Issue
    12
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    2704
  • Lastpage
    2705
  • Abstract
    Summary form only given. Heterostructures provide so many design parameters that it is impractical to adequately explore the design space empirically. The ability to evaluate the effects of changes to any design parameter rapidly is needed. A program, BandProf, that implements a one-dimensional, zero-current model to determine the self-consistent electrostatic potential and thus the energy-band profile is discussed. Realistic physical models are employed, including multiple-band extrema and full impurity statistics. This approach to device simulation, demanding results in a few seconds for structures of arbitrary design, requires that elegant and robust techniques be applied to every task performed by the program. Two such innovations embodied in BandProf are described
  • Keywords
    digital simulation; electronic engineering computing; heterojunction bipolar transistors; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; 1D model; BandProf; HBT; HEMT; MODFET; design parameters; device simulation; energy-band profile; full impurity statistics; interactive design environment; multiple-band extrema; quantum-well devices; self-consistent electrostatic potential; zero-current model; Annealing; Artificial intelligence; Capacitors; Contact resistance; Electrons; FETs; Gallium arsenide; MOCVD; Quantum well devices; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.158726
  • Filename
    158726