DocumentCode
812298
Title
Development of an interactive design environment for heterostructure and quantum-well devices
Author
Frensley, W.R.
Author_Institution
Texas Univ., Richardson, TX
Volume
38
Issue
12
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
2704
Lastpage
2705
Abstract
Summary form only given. Heterostructures provide so many design parameters that it is impractical to adequately explore the design space empirically. The ability to evaluate the effects of changes to any design parameter rapidly is needed. A program, BandProf, that implements a one-dimensional, zero-current model to determine the self-consistent electrostatic potential and thus the energy-band profile is discussed. Realistic physical models are employed, including multiple-band extrema and full impurity statistics. This approach to device simulation, demanding results in a few seconds for structures of arbitrary design, requires that elegant and robust techniques be applied to every task performed by the program. Two such innovations embodied in BandProf are described
Keywords
digital simulation; electronic engineering computing; heterojunction bipolar transistors; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; 1D model; BandProf; HBT; HEMT; MODFET; design parameters; device simulation; energy-band profile; full impurity statistics; interactive design environment; multiple-band extrema; quantum-well devices; self-consistent electrostatic potential; zero-current model; Annealing; Artificial intelligence; Capacitors; Contact resistance; Electrons; FETs; Gallium arsenide; MOCVD; Quantum well devices; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158726
Filename
158726
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