DocumentCode :
812338
Title :
Delta-doped SAGM avalanche photodiodes
Author :
Kuchibhotla, R. ; Campbell, Joe C. ; Tsai, Chia-Yin ; Tsang, W.T.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
Volume :
38
Issue :
12
fYear :
1991
fDate :
12/1/1991 12:00:00 AM
Firstpage :
2705
Lastpage :
2706
Abstract :
Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 μm thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 μm thick
Keywords :
avalanche photodiodes; semiconductor doping; 70 percent; APD; SAGM; absorption layer; avalanche photodiodes; delta-doped; fabrication; multiplication region; quantum efficiencies; separate absorption/grading/multiplication; top-surface reflector; Avalanche photodiodes; Capacitance; Doping; Indium gallium arsenide; Jacobian matrices; Molecular beam epitaxial growth; Packaging; Poisson equations; Resonance; Robustness;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.158729
Filename :
158729
Link To Document :
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