Title :
Delta-doped SAGM avalanche photodiodes
Author :
Kuchibhotla, R. ; Campbell, Joe C. ; Tsai, Chia-Yin ; Tsang, W.T.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 μm thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 μm thick
Keywords :
avalanche photodiodes; semiconductor doping; 70 percent; APD; SAGM; absorption layer; avalanche photodiodes; delta-doped; fabrication; multiplication region; quantum efficiencies; separate absorption/grading/multiplication; top-surface reflector; Avalanche photodiodes; Capacitance; Doping; Indium gallium arsenide; Jacobian matrices; Molecular beam epitaxial growth; Packaging; Poisson equations; Resonance; Robustness;
Journal_Title :
Electron Devices, IEEE Transactions on
