Title :
GaAs see the light [photodetectors]
Author :
Woodall, Jerry M. ; Warren, A.C. ; McInturff, D.T. ; Burroughes, J. ; Hodgson, Robert ; Melloch, M.R.
Author_Institution :
IBM Res. Div., Yorktown Heights, NY
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs:As) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs:As, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs:As. MSM structures with GaAs:As as the optically active material were also made
Keywords :
III-V semiconductors; arsenic; gallium arsenide; metal-semiconductor-metal structures; p-i-n diodes; photodetectors; photodiodes; 1.3 micron; As precipitates; GaAs:As; MSM structures; PIN diodes; optical receiver chip; optically active material; p-i-n photodetectors; Cobalt; Dark current; Frequency; Gallium arsenide; Optical films; PIN photodiodes; Photodetectors; Silicides; Surface emitting lasers; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
