High-density, planar Zn-diffused InGaAs/InP photodetector arrays with extended short-wavelength response

Summary form only given. A 512-element InGaAs photodetector array with low leakage, usable optical response from 600 to 1700 nm, and an element separation of 4.5 μm was developed. Electrical characterization of individual photodiode elements revealed a dark current of <1.0 nA at -4.0 V and a dynamic resistance of >400 MΩ at 0 V. These values are indicative of the high electrical isolation of individual elements despite the close proximity. Optical responsivity with no antireflection coating was 0.28 A/W at 600 nm and increased approximately linearly to 0.94 A/W at 1600 nm. Optical crosstalk between adjacent photodetectors was less than 1.0% at 1300 nm