Title :
Very-high-performance highly strained Ga0.23In0.77 As channel MODFETs
Author :
Chang, T.Y. ; Feuer, Mark D. ; Lalevic, B.
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. The authors report a transconductance of 843 mS/mm and a cutoff frequency 45.3 GHz for 1.2-μm FETs and 33 GHz for 1.9-μm FETs obtained by using a MODFET structure containing a highly strained Ga0.23In0.77As channel on InP substrate. It is important to either keep the gate recess quite shallow (~7 nm total) or control the process with a stop-etch layer for the achievement of these exceptionally high fT×Lg products. In device processing, three different gate-recess processes were used. Each is described. Results show that the combination of Ga0.23In0.77As and selective etch gate recess is an excellent technology for realizing fast FETs
Keywords :
III-V semiconductors; etching; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 1.2 micron; 1.9 micron; 33 GHz; 45.3 GHz; 843 mS; Ga0.23In0.77As-InP; HEMT; InP substrate; MODFET structure; cutoff frequency; fast FETs; gate-recess processes; highly strained channel; selective etch gate recess; shallow gate recess; stop-etch layer; transconductance; Cutoff frequency; Etching; FETs; HEMTs; Human computer interaction; Indium phosphide; MODFETs; Process control; Spontaneous emission; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
