• DocumentCode
    812409
  • Title

    Comparison between carried-induced optical index, loss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 μm DOS application

  • Author

    Zegaoui, M. ; Decoster, D. ; Harari, J. ; Vilcot, J.P. ; Mollot, F. ; Magnin, V. ; Chazelas, J.

  • Author_Institution
    Inst. d´´Electronique, Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq, France
  • Volume
    41
  • Issue
    10
  • fYear
    2005
  • fDate
    5/12/2005 12:00:00 AM
  • Firstpage
    613
  • Lastpage
    614
  • Abstract
    Experimentally carrier-induced optical index, propagation excess loss and carrier lifetime variations against injected current in n+-InP/i-InGaAsP/i-InP/p+-InP heterostructures are investigated. The heterostructures have quaternary bandgap composition of λg=1.18 and 1.30 μm, and they were specially designed for 1.55 μm wavelength digital optical switch (DOS) applications. The Q1.30 based heterostructure shows the best potential for high-performance DOS.
  • Keywords
    III-V semiconductors; arsenic compounds; carrier lifetime; energy gap; gallium compounds; indium compounds; integrated optics; optical switches; 1.55 micron; DOS application; GaInAsP-InP; carrier lifetime; carrier-induced optical index; digital optical switch; injected current; loss variations; propagation excess loss; quaternary bandgap composition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20050770
  • Filename
    1432550
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=812409