Title :
Observation of field-induced refractive index variation in quantum box structure
Author :
Aizawa, Takehiro ; Shimomura, Kazuya ; Arai, Shigehisa ; Suematsu, Yasuharu
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol.
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. The authors report the observation of refractive index variation in a GaInAs-InP quantum box structure. They also measured the wavelength dependence of the refractive index variation to confirm the quantum box effect. The fabrication process for the quantum box structure is discussed. The field-induced refractive index variation of the quantum box structure was measured using a Mach-Zehnder interferometer
Keywords :
III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; refractive index; semiconductor quantum dots; GaInAs-InP; Mach-Zehnder interferometer; fabrication process; field-induced refractive index variation; quantum box structure; wavelength dependence; Degradation; Dry etching; FETs; Optical films; Optical refraction; Optical variables control; Refractive index; Wavelength measurement; Wet etching; Wire;
Journal_Title :
Electron Devices, IEEE Transactions on
