• DocumentCode
    812473
  • Title

    Effectiveness of N2O-nitrided gate oxide for high-performance CMOSFETs

  • Author

    Hayashi, Teruaki ; Ohno, M. ; Uchiyama, Asami ; Fukuda, Hiroshi ; Iwabuchi, T. ; Ohno, S.

  • Author_Institution
    OKI Electr. Ind. Co. Ltd., Tokyo
  • Volume
    38
  • Issue
    12
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    2711
  • Abstract
    Summary form only given. High-quality thin SiO2 films are strongly needed for advanced integrated circuits such as CMOSFETs and EEPROMs. It is found that N2O-nitrided SiO2 film is more useful than NH3-nitrided SiO2 or pure SiO2 film for obtaining high-performance CMOSFETs. However, the mechanism of hot-carrier degradation of CMOSFETs with these oxide films has not been discussed. A detailed study is reported on hot-carrier-induced degradation phenomena in nitrided SiO2 gate CMOSFETs. It is confirmed that N atoms in gate oxide films prevent the generation of interface traps for NMOSFETs and H atoms accelerate electron trapping for PMOSFETs. Therefore, N2O-nitrided gate oxide film free from H atoms is effective for obtaining high-performance CMOSFETs
  • Keywords
    CMOS integrated circuits; dielectric thin films; electron traps; hot carriers; integrated circuit technology; nitrogen compounds; CMOS FET; MOSFET; N2O; N2O-nitrided gate oxide; NMOSFETs; PMOSFETs; Si-SiNO; electron trapping; hot-carrier-induced degradation; integrated circuits; interface trap prevention; thin SiO2 films; CMOSFETs; Charge pumps; Interface states; Monitoring; Power supplies; Rapid thermal processing; State estimation; Thermal degradation; Thermal stresses; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.158741
  • Filename
    158741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=812473