Thermal re-emission of trapped hot electrons in NMOS transistors

Summary form only given. A simple model of injection and thermal re-emission is shown to be adequate for predicting the hot-electron-injection-induced degradation on submicrometer NMOS technology under AC stress. Hot-carrier stressing has been carried out on LDD NMOS transistors under various AC use conditions. An example of the results shows that a 14% degradation in drain current is fully recovered after 3500 min at 70°C. From the Arrhenius plot of the recovery phase, a 1.5-eV activation energy of the trapped electrons in SiO₂ has been extracted