Ultra-high speed p-i-n/HBT monolithic OEIC photoreceiver

Author

Pedrotti, K.D. ; Nubling, R.B. ; Farley, C.W. ; Sovero, E.A. ; Chang, M.F.

Author_Institution

Rockwell Int. Corp., Thousand Oaks, CA

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2713

Lastpage

2714

Abstract

Summary form only given. An extremely wide-bandwidth monolithic OEIC receiver with high gain and low noise is described. It demonstrates the ability of HBT technology to provide low-noise and high-bandwidth performance in a preamplifier combined with an easily and naturally integrable optical detector. A circuit topology is also demonstrated to yield good high-speed performance with GaAs-AlGaAs HBTs. With minor modifications and improvements both speed and quantum efficiency should be easily increased. This approach can be extended into the InGaAs-InAlAs or InGaAs-InP system to provide operation at 1.3 and 1.55 μm

Keywords

heterojunction bipolar transistors; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodetectors; photodiodes; receivers; 1.3 micron; 1.55 micron; GaAs-AlGaAs; HBT technology; InGaAs-InAlAs; InGaAs-InP; PIN device; circuit topology; high gain; high-speed performance; low noise; monolithic OEIC photoreceiver; optical detector; p-i-n photodetector; preamplifier; wide-bandwidth; Circuit noise; Circuit topology; Heterojunction bipolar transistors; Optical detectors; Optical noise; Optical receivers; Optoelectronic devices; PIN photodiodes; Preamplifiers; Ultraviolet sources;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158745

Filename

158745