Title :
Avalanche electron emitter arrays using Si ultra-shallow p-n junctions
Author :
Lu, Yang ; Zhu, Dalong ; Lalevic, B.
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. A silicon avalanche electron emitter array was fabricated using ultrashallow p-n junctions biased in the avalanche region. The devices were fabricated on a p- epilayer grown on p+ substrates. The most promising applications include flat panel displays with high current density and brightness; an electron source for scientific instrumentation; and an electron source in microwave applications, which requires a long and thin rectilinear electron beam
Keywords :
cathodes; electron field emission; elemental semiconductors; p-n junctions; silicon; vacuum microelectronics; Si; avalanche electron emitter array; cold cathodes; electron source; flat panel displays; p+ substrates; p- epilayer; thin rectilinear electron beam; ultra-shallow p-n junctions; ultrashallow junctions; Brightness; Current density; Electron beams; Electron guns; Electron sources; Flat panel displays; Instruments; Microwave devices; P-n junctions; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
