36-GHz static digital frequency dividers in AlInAs-GaInAs HBT technology

Author

Jensen, J.F. ; Stanchina, William E. ; Metzger, R.A. ; Liu, Tiegen ; Kargodorian, T.V. ; Pierce, M.W.

Author_Institution

Hughes Res. Lab., Malibu, CA

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2719

Lastpage

2720

Abstract

Summary form only given. Static divide-by-four circuits have been fabricated that operate up to 36 GHz using AlInAs-GaInAs heterojunction bipolar transistor (HBT) IC technology processing an f_t and f_max of 110 and 73 GHz, respectively. The transistors used consisted of an abrupt emitter-base junction design which incorporated a low-temperature p-GaInAs spacer as part of the base to inhibit beryllium diffusion. The AlInAs-GaInAs HBT device layers were grown lattice-matched to semi-insulating InP substrates by solid-source molecular beam epitaxy (MBE)

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; digital integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; 36 GHz; AlInAs-GaInAs; HBT technology; IC technology; InP substrates; abrupt emitter-base junction; divide-by-four circuits; heterojunction bipolar transistor; low-temperature p-GaInAs spacer; molecular beam epitaxy; semiinsulating InP substrate; solid source MBE; static digital frequency dividers; Contact resistance; Electrical resistance measurement; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Silicon; Space technology; Temperature measurement; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158756

Filename

158756