Title :
6-GHz AlInAs/GaInAs/InP DHBT´s grown by MOVPE+MBE
Author :
Stanchina, William E. ; Metzger, R.A. ; Liu, Tiegen ; Jensen, J.F. ; Pierce, M.W.
Author_Institution :
Hughes Res. Lab., Malibu, CA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. N-p-n AlInAs/GaInAs/InP double-heterojunction bipolar transistors (DHBTs) have been fabricated. They operated with common emitter current gains to over 125 and cutoff frequencies (both fT and fmax) of approximately 60 GHz. The epitaxial structures for these devices were grown in a two-step sequence utilizing MOVPE for the InP collector structure followed by solid source MBE for the growth of the GaInAs base and AlInAs emitter structures. The DHBTs were fabricated as emitter-up, mesa transistors with self-aligned base contacts. The MOVPE-grown portion consisted of a 690-nm GaInAs (n+=1×1019 cm-3) subcollector with a 390-nm-thick InP collector doped at n=1.4×1016 cm-3. The remaining epitaxy was grown by solid source MBE
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; solid-state microwave devices; vapour phase epitaxial growth; 60 GHz; AlInAs-GaInAs-InP; InP collector structure; MOVPE; cutoff frequencies; double-heterojunction bipolar transistors; epitaxial structures; mesa transistors; n-p-n HBT; self-aligned base contacts; solid source MBE; Bipolar transistors; DH-HEMTs; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
