6-GHz AlInAs/GaInAs/InP DHBT´s grown by MOVPE+MBE

Author

Stanchina, William E. ; Metzger, R.A. ; Liu, Tiegen ; Jensen, J.F. ; Pierce, M.W.

Author_Institution

Hughes Res. Lab., Malibu, CA

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2720

Abstract

Summary form only given. N-p-n AlInAs/GaInAs/InP double-heterojunction bipolar transistors (DHBTs) have been fabricated. They operated with common emitter current gains to over 125 and cutoff frequencies (both f_T and f_max) of approximately 60 GHz. The epitaxial structures for these devices were grown in a two-step sequence utilizing MOVPE for the InP collector structure followed by solid source MBE for the growth of the GaInAs base and AlInAs emitter structures. The DHBTs were fabricated as emitter-up, mesa transistors with self-aligned base contacts. The MOVPE-grown portion consisted of a 690-nm GaInAs (n⁺=1×10¹⁹ cm^-3) subcollector with a 390-nm-thick InP collector doped at n=1.4×10¹⁶ cm^-3. The remaining epitaxy was grown by solid source MBE

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; solid-state microwave devices; vapour phase epitaxial growth; 60 GHz; AlInAs-GaInAs-InP; InP collector structure; MOVPE; cutoff frequencies; double-heterojunction bipolar transistors; epitaxial structures; mesa transistors; n-p-n HBT; self-aligned base contacts; solid source MBE; Bipolar transistors; DH-HEMTs; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Zinc compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158757

Filename

158757