DocumentCode :
812700
Title :
Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors With Ultrathin Oxides and High- 
Dielectrics
Author :
Chen, Chih-Hao ; Chuang, Kai-Chieh ; Hwu, Jenn-Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume :
56
Issue :
6
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
1262
Lastpage :
1268
Abstract :
The inversion current conduction mechanism for MOS(p) capacitors with ultrathin oxides was analyzed from another aspect of bulk traps in this paper. The relationships between deep depletion and generation-recombination current were also studied. It was found that the generation-recombination current due to bulk traps is proportional to the deep-depletion width and dominates the inversion tunneling current. Moreover, it was observed that the inversion tunneling current levels for SiO2, Al2O3, and HfO2 gate dielectrics were different. This discrepancy was explained with their energy band diagrams. Due to the small conduction-band offset of HfO2, the gate dielectrics of HfO2 show a worse capability to block the inversion tunneling current in the saturation region than Al2O3 gate dielectrics.
Keywords :
MOS capacitors; alumina; hafnium compounds; high-k dielectric thin films; silicon compounds; tunnelling; Al2O3; HfO2; MOS(p) capacitors; SiO2; bulk traps; conduction-band offset; deep depletion; energy band diagrams; gate dielectrics; generation-recombination current; high-k dielectrics; inversion tunneling current saturation behavior; ultrathin oxides; Capacitors; Conducting materials; Electrons; Gate leakage; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFETs; Tunneling; Conduction-band offset; deep-depletion; inversion tunneling current;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2019153
Filename :
4909064
Link To Document :
