DocumentCode
812727
Title
200-A/cm2 threshold current density 1.5-μm GaInAs/AlGaInAs strained-layer GRIN-SCH quantum-well laser diodes grown by OMCVD
Author
Kasukawa, A. ; Bhat, Ritesh ; Zah, C.E. ; Koza, M.A. ; Schwarz, S.A. ; Lee, T.P.
Author_Institution
Bell Commun. Res., Red Bank, NJ
Volume
38
Issue
12
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
2690
Abstract
Summary form only given. The authors report 1.5 μm GaInAs/AlGaInAs GRIN-SCH SL (strained layer) QW (quantum well) LDs (laser diodes) having both compressive and tensile strain in the well. They were grown by low-pressure organometallic chemical vapor deposition (OMCVD). Very low threshold current densities of 200 and 400 A/cm2 were obtained in tensile and compressive SL QW LDs, respectively. The characteristic temperatures were 60 K for a lattice-matched QW LD, 72 K for a compressive SL QW LD, and 50 K for a tensile SL QW LD. Lasing wavelengths were in the 1.5 μm range for all cases
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 50 K; 60 K; 72 K; GaInAs-AlGaInAs; OMCVD; characteristic temperatures; compressive strain; lasing wavelength; low-pressure organometallic chemical vapor deposition; strained layer GRINSCH quantum well lasers; tensile strain; threshold current density; Bandwidth; Diodes; Laser modes; Length measurement; Photodetectors; Power generation; Power lasers; Quantum well lasers; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158769
Filename
158769
Link To Document