Space-charge region recombination in heterojunction bipolar transistors

Author

Parikh, Chetan D. ; Lindholm, Fredrik A.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

39

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2197

Lastpage

2205

Abstract

A new comprehensive model for space-charge region (SCR) recombination current in abrupt and graded energy gap heterojunction bipolar transistors (HBTs) is derived. It is shown that if a spike is present in one of the bands at the heterojunction interface, the SCR recombination current becomes interrelated with the collector current. A previously proposed charge control model for the HBT is modified to include the SCR recombination current. The model is used to study SCR recombination characteristics in HBTs

Keywords

electron-hole recombination; energy gap; heterojunction bipolar transistors; semiconductor device models; space charge; HBT; abrupt energy gap; charge control model; collector current; graded energy gap; heterojunction bipolar transistors; heterojunction interface; model; recombination current; space-charge region; Bipolar transistors; Current density; Helium; Heterojunction bipolar transistors; Integral equations; Predictive models; Radiative recombination; Semiconductor materials; Silicon; Thyristors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158788

Filename

158788