• DocumentCode
    812805
  • Title

    CW measurement of HBT thermal resistance

  • Author

    Dawson, Dale E. ; Gupta, Aditya K. ; Salib, Mike L.

  • Author_Institution
    Westinghouse Electric Corp., Baltimore, MD, USA
  • Volume
    39
  • Issue
    10
  • fYear
    1992
  • fDate
    10/1/1992 12:00:00 AM
  • Firstpage
    2235
  • Lastpage
    2239
  • Abstract
    Measurements of the temperature dependence of β and VBE were made on AlGaAs-GaAs HBTs and used to determine device thermal resistance. The measurements were CW and not switched or pulsed in order to have a simpler procedure. With base doping greater than 1019 cm-3, HBTs have negligible base-width modulation (i.e., flat IC versus VCE characteristics) which makes CW thermal resistance measurement especially direct and simple
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device testing; thermal resistance measurement; AlGaAs-GaAs; CW measurement; HBT thermal resistance; temperature dependence; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Negative feedback; Power dissipation; Power measurement; Pulse measurements; Switches; Temperature dependence; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.158793
  • Filename
    158793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=812805