Title :
CW measurement of HBT thermal resistance
Author :
Dawson, Dale E. ; Gupta, Aditya K. ; Salib, Mike L.
Author_Institution :
Westinghouse Electric Corp., Baltimore, MD, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
Measurements of the temperature dependence of β and VBE were made on AlGaAs-GaAs HBTs and used to determine device thermal resistance. The measurements were CW and not switched or pulsed in order to have a simpler procedure. With base doping greater than 1019 cm-3, HBTs have negligible base-width modulation (i.e., flat IC versus VCE characteristics) which makes CW thermal resistance measurement especially direct and simple
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device testing; thermal resistance measurement; AlGaAs-GaAs; CW measurement; HBT thermal resistance; temperature dependence; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Negative feedback; Power dissipation; Power measurement; Pulse measurements; Switches; Temperature dependence; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
