Title :
Transient effects in rapid thermal processing
Author :
Campbell, Stephen A. ; Knutson, Karson L.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
11/1/1992 12:00:00 AM
Abstract :
Using a realistic model of a rapid thermal processing chamber including Navier-Stokes calculations of the gas losses, the stresses and yield strengths of silicon wafers were determined for several linear ramp rates. It was found that the stress to yield strength ratio is a sensitive function of the ramp rate and the radiant uniformity. Radiation patterns that produce good steady-state thermal nonuniformity overheat the wafer edges during heating transients, leading to high stress levels
Keywords :
elemental semiconductors; rapid thermal processing; semiconductor technology; silicon; temperature distribution; thermal analysis; thermal stresses; transients; yield strength; yield stress; Navier-Stokes calculations; RTP chamber; Si wafers; gas losses; heating transients; linear ramp rates; model; radiant uniformity; radiation patterns; rapid thermal processing; stresses; yield strengths; Atmospheric modeling; Heat transfer; Heating; Power system modeling; Rapid thermal processing; Semiconductor device modeling; Silicon; Steady-state; Temperature; Thermal stresses;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
