Transient effects in rapid thermal processing

Author

Campbell, Stephen A. ; Knutson, Karson L.

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

5

Issue

4

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

302

Lastpage

307

Abstract

Using a realistic model of a rapid thermal processing chamber including Navier-Stokes calculations of the gas losses, the stresses and yield strengths of silicon wafers were determined for several linear ramp rates. It was found that the stress to yield strength ratio is a sensitive function of the ramp rate and the radiant uniformity. Radiation patterns that produce good steady-state thermal nonuniformity overheat the wafer edges during heating transients, leading to high stress levels

Keywords

elemental semiconductors; rapid thermal processing; semiconductor technology; silicon; temperature distribution; thermal analysis; thermal stresses; transients; yield strength; yield stress; Navier-Stokes calculations; RTP chamber; Si wafers; gas losses; heating transients; linear ramp rates; model; radiant uniformity; radiation patterns; rapid thermal processing; stresses; yield strengths; Atmospheric modeling; Heat transfer; Heating; Power system modeling; Rapid thermal processing; Semiconductor device modeling; Silicon; Steady-state; Temperature; Thermal stresses;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.175362

Filename

175362