Title :
An ultra-high-speed optoelectronic integrated receiver for fiber-optic communications
Author :
Yano, Hiroshi ; Sasaki, Goro ; Murata, Michio ; Hayashi, Hideki
Author_Institution :
Sumitomo Electric Ind. Ltd., Yokohama, Japan
fDate :
10/1/1992 12:00:00 AM
Abstract :
An ultra-high-speed optoelectronic integrated receiver consisting of a GaInAs p-i-n photodiode and a transimpedance AlInAs-GaInAs high-electron-mobility-transistor amplifier was successfully fabricated on an InP substrate. A 3-dB bandwidth of 6 GHz with a transimpedance of 50 dBΩ was achieved for the receiver with a feedback resistance of 750 Ω. Measured noise currents of the receiver were analyzed and found to be dominated by the low-frequency noise and the induced gate noise. A sensitivity of -21.2 dBm for 8.0-Gb/s NRZ signals was deduced from the noise current characteristics
Keywords :
feedback; high electron mobility transistors; integrated optoelectronics; optical receivers; p-i-n photodiodes; wideband amplifiers; 6 GHz; 750 ohm; 8 Gbit/s; AlInAs-GaInAs; HEMT amplifier; InP; InP substrate; NRZ signals; OEIC; feedback resistance; fiber-optic communications; high-electron-mobility-transistor; induced gate noise; low-frequency noise; noise current characteristics; optoelectronic integrated receiver; p-i-n photodiode; transimpedance; ultra-high-speed; Bandwidth; Electron devices; Gallium arsenide; HEMTs; Indium phosphide; Low-frequency noise; Optical fiber communication; Optical noise; Optoelectronic devices; PIN photodiodes;
Journal_Title :
Electron Devices, IEEE Transactions on
