An ultra-high-speed optoelectronic integrated receiver for fiber-optic communications

Author

Yano, Hiroshi ; Sasaki, Goro ; Murata, Michio ; Hayashi, Hideki

Author_Institution

Sumitomo Electric Ind. Ltd., Yokohama, Japan

Volume

39

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2254

Lastpage

2259

Abstract

An ultra-high-speed optoelectronic integrated receiver consisting of a GaInAs p-i-n photodiode and a transimpedance AlInAs-GaInAs high-electron-mobility-transistor amplifier was successfully fabricated on an InP substrate. A 3-dB bandwidth of 6 GHz with a transimpedance of 50 dBΩ was achieved for the receiver with a feedback resistance of 750 Ω. Measured noise currents of the receiver were analyzed and found to be dominated by the low-frequency noise and the induced gate noise. A sensitivity of -21.2 dBm for 8.0-Gb/s NRZ signals was deduced from the noise current characteristics

Keywords

feedback; high electron mobility transistors; integrated optoelectronics; optical receivers; p-i-n photodiodes; wideband amplifiers; 6 GHz; 750 ohm; 8 Gbit/s; AlInAs-GaInAs; HEMT amplifier; InP; InP substrate; NRZ signals; OEIC; feedback resistance; fiber-optic communications; high-electron-mobility-transistor; induced gate noise; low-frequency noise; noise current characteristics; optoelectronic integrated receiver; p-i-n photodiode; transimpedance; ultra-high-speed; Bandwidth; Electron devices; Gallium arsenide; HEMTs; Indium phosphide; Low-frequency noise; Optical fiber communication; Optical noise; Optoelectronic devices; PIN photodiodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158796

Filename

158796