Short-channel pMOSTs in a high-resistivity silicon substrate. II. Noise performance

Author

Vanstraelen, Guy ; Simoen, Eddy ; Claeys, Cor ; Declerck, Gilbert J.

Author_Institution

IMEC, Leuven, Belgium

Volume

39

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2278

Lastpage

2283

Abstract

For pt.I, see ibid., vol.39, no.10, p.2268-77 (1992). The noise performance, important for the use of p-channel transistors on high-resistivity silicon in analog applications, is investigated. This is done for the two operation modes: bulk (|V_gs|<|V_T|) and surface (| V_gs|>|V_T|). For the studied transistors, both modes are characterized by a 1/f noise spectrum extending to frequencies of up to ≈100 Hz, and followed by a white-noise spectrum, determined by the substrate resistance

Keywords

equivalent circuits; insulated gate field effect transistors; random noise; semiconductor device models; semiconductor device noise; 1/f noise spectrum; Si; bulk mode; high resistivity Si substrate; noise performance; p-channel transistors; pMOS device; short-channel pMOST; substrate resistance; surface mode; white-noise spectrum; 1f noise; Circuit noise; Current-voltage characteristics; Frequency; MOSFETs; Signal to noise ratio; Silicon; Superconducting device noise; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158799

Filename

158799