• DocumentCode
    812889
  • Title

    a-Si:H (alloy) p-i-n superlattice solar cell contacts

  • Author

    Varonides, Argyrios C. ; Rothwarf, Allen

  • Author_Institution
    Dept. of Electron. Eng., Scranton Univ., PA, USA
  • Volume
    39
  • Issue
    10
  • fYear
    1992
  • fDate
    10/1/1992 12:00:00 AM
  • Firstpage
    2284
  • Lastpage
    2289
  • Abstract
    A means of increasing the open-circuit voltage of p-i-n amorphous silicon-based solar cells without degrading their other properties is proposed. This is accomplished through the use of superlattices that replace the n and p contact regions. The proposed structure is a-Si:H/a-Si0.8N0.2:H for the p contact and a-Si:H/a-Si0.5C0.5:H for the n contact. Using reasonable values for relevant parameters, the proposed structure may have an open-circuit voltage higher than that of present cells by as much as 0.20 V
  • Keywords
    Fermi level; amorphous semiconductors; electrical contacts; elemental semiconductors; hydrogen; semiconductor superlattices; solar cells; Si:H-Si0.5C0.5:H n contact; Si:H-Si0.8N0.2:H p contact; neutrality condition; open-circuit voltage; p-i-n device; superlattice solar cell contacts; Amorphous materials; Conducting materials; Conductivity; Degradation; Helium; PIN photodiodes; Photovoltaic cells; Quantization; Semiconductor superlattices; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.158800
  • Filename
    158800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=812889