Integrated circuit design for manufacturing through statistical simulation of process steps

Author

Sanders, Thomas J. ; Rekab, Kamel ; Rotella, Francis M. ; Means, Dale P.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Inst. of Technol., Melbourne, FL, USA

Volume

5

Issue

4

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

368

Lastpage

372

Abstract

The methodology, implementation, and results of a design for manufacturing (DFM) technique as applied to an integrated circuit boron base formation for an n-p-n transistor are presented. The primary purpose of the DFM technique is to achieve acceptable statistical prediction of the results by using the minimum number of variables and reducing the time required to perform physically based simulations. Excellent statistical results are achieved while the number of simulations is reduced by at least a factor of five if judicious statistical techniques are applied

Keywords

integrated circuit manufacture; statistical analysis; B base formation; Si:B; design for manufacturing; integrated circuit; n-p-n transistor; statistical prediction; statistical simulation; Analytical models; Circuit simulation; Computational modeling; Design for manufacture; Design methodology; Integrated circuit manufacture; Integrated circuit synthesis; Manufacturing processes; Process design; Virtual manufacturing;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.175369

Filename

175369