DocumentCode :
81290
Title :
Microplasma Logic Gates
Author :
Pai, Pradeep ; Tabib-Azar, Massood
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Utah, Salt Lake City, UT, USA
Volume :
42
Issue :
8
fYear :
2014
fDate :
Aug. 2014
Firstpage :
1995
Lastpage :
1998
Abstract :
This paper demonstrates for the first time the use of microplasma to perform AND, OR, and XOR logic operations. The logic circuits are implemented similar to diode-resistor logic. Output voltages are in the range of 5-40 V and can be modified by varying the load resistor. The active area of the microplasma device is just 50 μm × 5 μm. The small interelectrode gap kept breakdown voltage to ~250 V when operated in He gas at atmospheric pressure. The use of plasma as a source of free carriers is also demonstrated, with free carriers available up to 500-μm away from plasma.
Keywords :
electrodes; logic circuits; logic gates; resistors; AND logic circuit operation; He gas; OR logic circuit operation; XOR logic circuit operation; atmospheric pressure; diode-resistor logic; free carrier source; interelectrode gap; load resistor; microplasma logic gate; voltage 5 V to 40 V; Educational institutions; Electrodes; Logic gates; Plasma measurements; Plasmas; Resistors; Switches; Atmospheric-pressure plasmas; glow discharge devices; plasma devices; plasma devices.;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2014.2332272
Filename :
6849456
Link To Document :
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