Microplasma Logic Gates

Author

Pai, Pradeep ; Tabib-Azar, Massood

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Utah, Salt Lake City, UT, USA

Volume

42

Issue

8

fYear

2014

fDate

Aug. 2014

Firstpage

1995

Lastpage

1998

Abstract

This paper demonstrates for the first time the use of microplasma to perform AND, OR, and XOR logic operations. The logic circuits are implemented similar to diode-resistor logic. Output voltages are in the range of 5-40 V and can be modified by varying the load resistor. The active area of the microplasma device is just 50 μm × 5 μm. The small interelectrode gap kept breakdown voltage to ~250 V when operated in He gas at atmospheric pressure. The use of plasma as a source of free carriers is also demonstrated, with free carriers available up to 500-μm away from plasma.

Keywords

electrodes; logic circuits; logic gates; resistors; AND logic circuit operation; He gas; OR logic circuit operation; XOR logic circuit operation; atmospheric pressure; diode-resistor logic; free carrier source; interelectrode gap; load resistor; microplasma logic gate; voltage 5 V to 40 V; Educational institutions; Electrodes; Logic gates; Plasma measurements; Plasmas; Resistors; Switches; Atmospheric-pressure plasmas; glow discharge devices; plasma devices; plasma devices.;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2014.2332272

Filename

6849456