DocumentCode
812927
Title
Thermal noise in buried-channel MOSFET
Author
Goldminz, Lavy ; Nemirovsky, Yael
Author_Institution
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Volume
39
Issue
10
fYear
1992
fDate
10/1/1992 12:00:00 AM
Firstpage
2325
Lastpage
2332
Abstract
A new model for the thermal noise in long buried-channel MOS transistors is presented. The model calculates the dependence of the transistor noise performance on both device fabrication parameters and the four terminal voltages. The noise calculations are based on the gradual channel approximation, using simple charge-voltage relations. Analytic models are obtained for the different regions of operation of the transistor. Noise measurements are presented and compared with results predicted by the model
Keywords
insulated gate field effect transistors; semiconductor device models; semiconductor device noise; thermal noise; analytic models; buried-channel MOSFET; charge-voltage relations; device fabrication parameters; gradual channel approximation; long buried-channel MOS transistors; model; noise performance; terminal voltages; thermal noise; Capacitance; Circuit noise; Conductivity; Doping; Frequency; MOSFET circuits; Noise measurement; Semiconductor device noise; Semiconductor process modeling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158804
Filename
158804
Link To Document