Title :
Thermal noise in buried-channel MOSFET
Author :
Goldminz, Lavy ; Nemirovsky, Yael
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
10/1/1992 12:00:00 AM
Abstract :
A new model for the thermal noise in long buried-channel MOS transistors is presented. The model calculates the dependence of the transistor noise performance on both device fabrication parameters and the four terminal voltages. The noise calculations are based on the gradual channel approximation, using simple charge-voltage relations. Analytic models are obtained for the different regions of operation of the transistor. Noise measurements are presented and compared with results predicted by the model
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor device noise; thermal noise; analytic models; buried-channel MOSFET; charge-voltage relations; device fabrication parameters; gradual channel approximation; long buried-channel MOS transistors; model; noise performance; terminal voltages; thermal noise; Capacitance; Circuit noise; Conductivity; Doping; Frequency; MOSFET circuits; Noise measurement; Semiconductor device noise; Semiconductor process modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
