Title :
Plasma immersion ion implantation doping using a microwave multipolar bucket plasma
Author :
Qin, Shu ; McGruer, Nicol E. ; Chan, Chung ; Warner, Keith
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
Using plasma immersion ion implantation, silicon has been doped with boron in a high-voltage pulsed microwave multipolar bucket plasma system. Diborane gas (1%) diluted in helium is used as an ion source. A sheet resistance of 57 Ω/□ and an implanted dose of 1.9×1015/cm2 are obtained in 10 min. when the target potential is pulsed to -10 kV with a 1% duty cycle. The boron profile in the silicon substrate is different from that predicted for a conventional 10-keV ion implantation. Silicon p-n junctions fabricated by this technique are of good quality
Keywords :
boron; doping profiles; elemental semiconductors; ion implantation; p-n homojunctions; silicon; B2H6; B2H6-He; Si:B; doping profile; implanted dose; microwave multipolar bucket plasma; p-n junctions; plasma immersion ion implantation; sheet resistance; target potential; Boron; Helium; Ion implantation; Ion sources; Plasma accelerators; Plasma immersion ion implantation; Plasma sources; Semiconductor device doping; Silicon; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
