Title :
A new method for determining the reverse transit time in bipolar transistors
Author :
Kim, Yeong-Seuk ; Burnett, David ; Lage, Craig S.
Author_Institution :
Motorola Inc., Austin, TX, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
The reverse transmit time is an important parameter for determining the delay of bipolar transistors in saturation. A new method is proposed to extract the reverse transit time of bipolar transistors. The technique is based on AC short-circuit current gain measurements using a network analyzer. The method is very simple and is very useful for on-wafer measurements
Keywords :
bipolar transistors; delays; gain measurement; network analysers; short-circuit currents; AC short-circuit current gain; bipolar transistors; delay; network analyzer; on-wafer measurements; reverse transit time; saturation; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Current measurement; Delay; Driver circuits; Gain measurement; Probes; Pulse measurements; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
