DocumentCode
812985
Title
A new method for determining the reverse transit time in bipolar transistors
Author
Kim, Yeong-Seuk ; Burnett, David ; Lage, Craig S.
Author_Institution
Motorola Inc., Austin, TX, USA
Volume
39
Issue
10
fYear
1992
fDate
10/1/1992 12:00:00 AM
Firstpage
2364
Lastpage
2367
Abstract
The reverse transmit time is an important parameter for determining the delay of bipolar transistors in saturation. A new method is proposed to extract the reverse transit time of bipolar transistors. The technique is based on AC short-circuit current gain measurements using a network analyzer. The method is very simple and is very useful for on-wafer measurements
Keywords
bipolar transistors; delays; gain measurement; network analysers; short-circuit currents; AC short-circuit current gain; bipolar transistors; delay; network analyzer; on-wafer measurements; reverse transit time; saturation; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Current measurement; Delay; Driver circuits; Gain measurement; Probes; Pulse measurements; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158810
Filename
158810
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