• DocumentCode
    813009
  • Title

    High Density and Low Leakage Current in \\hbox {TiO}_{2} MIM Capacitors Processed at 300 ^{\\circ} \\hb</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Cheng, C.H. ; Lin, S.H. ; Jhou, K.Y. ; Chen, W.J. ; Chou, C.P. ; Yeh, F.S. ; Hu, J. ; Hwang, M. ; Arikado, T. ; McAlister, S.P. ; Chin, Albert</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Mech. Eng., Nat. Chiao Tung Univ., Hsinchu</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>29</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>8</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2008</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>845</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>847</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>We report Ir/TiO<sub>2</sub>/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum<sup>2</sup> and a leakage current of 3 times 10<sup>-8</sup> (25degC) or 6 times 10<sup>-7</sup> (125degC) A/cm<sup>2</sup> at -1 V. This performance is due to the combined effects of 300degC nanocrystallized high-kappa TiO<sub>2</sub>, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MIM devices; VLSI; capacitors; nanostructured materials; tantalum compounds; titanium compounds; Ir; TaN; TiO<sub>2</sub>; high conduction band offset; high work-function upper electrode; metal-insulator-metal capacitors; nanocrystallized high-kappa TiO<sub>2</sub>; temperature 125 degC; temperature 25 degC; temperature 300 C; very-large-scale-integration technologies; voltage -1 V; Capacitance; Crystallization; Dielectric substrates; Electrodes; Isolation technology; Leakage current; MIM capacitors; Plasma temperature; Surface resistance; Very large scale integration; <formula formulatype=$ hbox{TiO}_{2}$; High $kappa$; Ir; metal–insulator–metal (MIM);

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2000833
  • Filename
    4571128
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=813009