Title :
Soft error susceptibility and immune structures in dynamic random access memories (DRAMs) investigated by nuclear microprobes
Author :
Takai, M. ; Kishimoto, T. ; Ohno, Y. ; Sayama, H. ; Sonoda, K. ; Satoh, S. ; Nishimura, T. ; Miyoshi, H. ; Kinomura, A. ; Horino, Y. ; Fujii, K.
Author_Institution :
Fac. of Eng. Sci., Osaka Univ., Japan
fDate :
4/1/1996 12:00:00 AM
Abstract :
Soft error susceptibility mapping and ion-beam-induced-current (IBIC) measurements using a nuclear microprobe allow a quantitative evaluation of the charge collection which induces upset in dynamic random access memories (DRAMs). Soft error susceptibility in DRAMs as a function of local position and structure has been reviewed. Charge collection efficiency induced by incident ions on reverse-biased n+ p junctions with various barrier well structures has been compared with that with a conventional well in a p- epitaxial layer on a p+ substrate
Keywords :
DRAM chips; fault tolerant computing; integrated circuit reliability; integrated circuit testing; ion microprobe analysis; radiation hardening (electronics); space vehicle electronics; DRAM; IBIC; barrier well structures; charge collection; dynamic random access memories; incident ions; ion-beam-induced-current measurements; local position; nuclear microprobes; p+ substrate; p- epitaxial layer; quantitative evaluation; reverse-biased n+p junctions; soft error susceptibility; structure; Alpha particles; Capacitors; DRAM chips; Epitaxial layers; Nuclear measurements; Random access memory; Semiconductor device measurement; Single event upset; Substrates; Wiring;
Journal_Title :
Nuclear Science, IEEE Transactions on
