Soft error susceptibility and immune structures in dynamic random access memories (DRAMs) investigated by nuclear microprobes

Author

Takai, M. ; Kishimoto, T. ; Ohno, Y. ; Sayama, H. ; Sonoda, K. ; Satoh, S. ; Nishimura, T. ; Miyoshi, H. ; Kinomura, A. ; Horino, Y. ; Fujii, K.

Author_Institution

Fac. of Eng. Sci., Osaka Univ., Japan

Volume

43

Issue

2

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

696

Lastpage

704

Abstract

Soft error susceptibility mapping and ion-beam-induced-current (IBIC) measurements using a nuclear microprobe allow a quantitative evaluation of the charge collection which induces upset in dynamic random access memories (DRAMs). Soft error susceptibility in DRAMs as a function of local position and structure has been reviewed. Charge collection efficiency induced by incident ions on reverse-biased n⁺p junctions with various barrier well structures has been compared with that with a conventional well in a p^- epitaxial layer on a p⁺ substrate

Keywords

DRAM chips; fault tolerant computing; integrated circuit reliability; integrated circuit testing; ion microprobe analysis; radiation hardening (electronics); space vehicle electronics; DRAM; IBIC; barrier well structures; charge collection; dynamic random access memories; incident ions; ion-beam-induced-current measurements; local position; nuclear microprobes; p⁺ substrate; p^- epitaxial layer; quantitative evaluation; reverse-biased n⁺p junctions; soft error susceptibility; structure; Alpha particles; Capacitors; DRAM chips; Epitaxial layers; Nuclear measurements; Random access memory; Semiconductor device measurement; Single event upset; Substrates; Wiring;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.490913

Filename

490913