Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes

Author

Lee, Sung-Nam ; Ryu, H.Y. ; Paek, H.S. ; Son, J.K. ; Sung, Y.J. ; Kim, K.-S. ; Kim, H.K. ; Kim, H. ; Jang, T. ; Ha, K.H. ; Nam, O.H. ; Park, Y.

Author_Institution

Corp. R&D Inst., Samsung Electro-Mech. Co., Ltd., Suwon

Volume

29

Issue

8

fYear

2008

Firstpage

870

Lastpage

872

Abstract

InGaN quantum-well (QW) green laser diodes (LDs) with an emission wavelength of 483.7 nm were characterized by controlling the injection pulsewidth. The emission wavelength of LDs showed a large blueshift (> 20 nm) of spontaneous emission peak with increasing injection current below the threshold current. The huge blueshift was ascribed to the deep In localization states and the strong piezoelectric field in the green InGaN QW structure with higher In contents than conventional violet/blue InGaN QWs. However, the lasing wavelength of LDs was slightly redshifted by increasing the injection pulsewidth due to the thermal heating effects.

Keywords

III-V semiconductors; aluminium compounds; indium compounds; quantum well lasers; AlInGaN; blueshift; emission wavelength shift; green laser diodes; quantum well; thermal heating; wavelength 483.7 nm; Diode lasers; Displays; Gallium nitride; Light emitting diodes; Light sources; Quantum well devices; Quantum well lasers; Semiconductor lasers; Space vector pulse width modulation; Spontaneous emission; GaN; Gallium compounds; laser diode (LD); light-emitting diodes (LEDs); quantum well (QW); semiconductor lasers;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2001081

Filename

4571135