Title :
Logic AND/NAND gates based on three-terminal ballistic junctions
Author :
Reitzenstein, S. ; Worschech, L. ; Hartmann, P. ; Forchel, A.
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
fDate :
8/15/2002 12:00:00 AM
Abstract :
The application of two coupled electron Y-branch switches (YBS) as nanoelectronic logic gates is proposed. The output of one YBS verifies a logic AND conjunction and controls a second YBS, which is used as an amplifier and inverter generating simultaneously X AND Y as well as X AND Y
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; logic gates; nanotechnology; quantum interference devices; semiconductor switches; two-dimensional electron gas; GaAs-AlGaAs; amplifier; coupled electron Y-branch switches; inverter; logic AND conjunction; logic AND/NAND gates; modulation doped GaAs/AlGaAs heterostructures; nanoelectronic logic gates; three-terminal ballistic junctions; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020652
