Title :
Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors
Author :
Park, Jaechul ; Kim, Changjung ; Kim, Sunil ; Song, Ihun ; Kim, Sangwook ; Kang, Donghun ; Lim, Hyuck ; Yin, Huaxiang ; Jung, Ranju ; Lee, Eunha ; Lee, JaeCheol ; Kwon, Kee-Won ; Park, Youngsoo
Author_Institution :
Semicond. Device & Mater. Lab., Samsung Adv. Inst. of Technol., Yongin
Abstract :
In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit of a plot of the reciprocal of channel resistance versus gate voltage yields a threshold voltage of 3.5 V and a field-effect mobility of about 13.5 cm2/Vldrs. Furthermore, in a-GIZO TFTs, most of the current flows in the distance range of 0-0.5 mum from the channel edge and shorter than that in a-Si:H TFTs. Moreover, unlike a-Si:H TFTs, a-GIZO TFTs did not show an intersection point, because they did not contain a highly doped ohmic (n+) layer below the source/drain electrodes.
Keywords :
amorphous semiconductors; field effect transistors; gallium; indium; thin film transistors; zinc compounds; a-GIZO thin film transistors; amorphous gallium-indium zinc-oxide thin film transistors; channel resistance; field-effect mobility; gate voltage; source/drain series resistance; source/drain series-resistance effects; threshold voltage; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Amorphous materials; Contacts; III-V semiconductor materials; Laboratories; Liquid crystal displays; Temperature; Thin film transistors; Threshold voltage; Amorphous gallium–indium zinc-oxide thin film transistor (a-GIZO TFT); MOSFET circuits; a-Si:H TFT; analog circuits; intersection point; overlap distance; series resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000815
