DocumentCode
813177
Title
Improvement of SOI MOS current-mirror performances using serial-parallel association of transistors
Author
Ceuster, D. De ; Flandre, D. ; Colinge, J.P. ; Cristoloveanu, S.
Author_Institution
Microelectron. Lab., Katholieke Univ., Leuven, Belgium
Volume
32
Issue
4
fYear
1996
fDate
2/15/1996 12:00:00 AM
Firstpage
278
Lastpage
279
Abstract
The serial-parallel association of SOI MOSFETs proves to be useful for increasing the breakdown voltage and the early voltage of transistor structures. This permits one to realise current mirrors with an output-to-input current ratio close to unity in the weak, moderate and strong inversion regimes of the MOSFETs
Keywords
MOSFET circuits; analogue circuits; pulse amplifiers; silicon-on-insulator; SOI MOSFET current-mirror; breakdown voltage; early voltage; moderate inversion regime; output-to-input current ratio; serial-parallel association; strong inversion regime; weak inversion regime;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960252
Filename
490916
Link To Document