• DocumentCode
    81323
  • Title

    Uniform Complementary Resistive Switching in Tantalum Oxide Using Current Sweeps

  • Author

    Schmelzer, S. ; Linn, E. ; Böttger, U. ; Waser, R.

  • Author_Institution
    Inst. of Mater. in Electr. Eng. & Inf. Technol. II (IWE II), RWTH Aachen Univ., Aachen, Germany
  • Volume
    34
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    114
  • Lastpage
    116
  • Abstract
    Tantalum oxide (TaOx) is an advantageous material system to realize complementary resistive switches, but the ON-window starts to shrink after a few cycles in the voltage sweep mode. A power analysis reveals the presence of power boosts during conventional voltage sweeps in the nonswitching part cell. This power stress is significantly reduced by the use of current sweeps with voltage compliance, leading to very reproducible switching. The endurance is raised to >; 30000 cycles.
  • Keywords
    semiconductor storage; semiconductor switches; ON-window; TaOx; current sweep; material system; nonswitching part cell; power analysis; power boost; power stress; tantalum oxide; uniform complementary resistive switching; voltage sweep mode; Current measurement; Electrodes; Resistance; Resistors; Stress; Switches; Voltage measurement; Complementary resistive switch (CRS); memory devices; nonvolatile memory; resistive switching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2224634
  • Filename
    6365745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=81323