DocumentCode :
81323
Title :
Uniform Complementary Resistive Switching in Tantalum Oxide Using Current Sweeps
Author :
Schmelzer, S. ; Linn, E. ; Böttger, U. ; Waser, R.
Author_Institution :
Inst. of Mater. in Electr. Eng. & Inf. Technol. II (IWE II), RWTH Aachen Univ., Aachen, Germany
Volume :
34
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
114
Lastpage :
116
Abstract :
Tantalum oxide (TaOx) is an advantageous material system to realize complementary resistive switches, but the ON-window starts to shrink after a few cycles in the voltage sweep mode. A power analysis reveals the presence of power boosts during conventional voltage sweeps in the nonswitching part cell. This power stress is significantly reduced by the use of current sweeps with voltage compliance, leading to very reproducible switching. The endurance is raised to >; 30000 cycles.
Keywords :
semiconductor storage; semiconductor switches; ON-window; TaOx; current sweep; material system; nonswitching part cell; power analysis; power boost; power stress; tantalum oxide; uniform complementary resistive switching; voltage sweep mode; Current measurement; Electrodes; Resistance; Resistors; Stress; Switches; Voltage measurement; Complementary resistive switch (CRS); memory devices; nonvolatile memory; resistive switching;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2224634
Filename :
6365745
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=81323
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