Impact of Gate-Induced Strain on MuGFET Reliability

Author

Nathanael, Rhesa ; Xiong, Weize ; Cleavelin, C. Rinn ; Liu, Tsu-Jae King

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA

Volume

29

Issue

8

fYear

2008

Firstpage

916

Lastpage

919

Abstract

Hot carrier injection (HCI) reliability and negative bias temperature instability (NBTI) of multiple-gate field-effect transistors (MuGFETs) with highly tensile metal gate electrodes were investigated. The results were compared with those from control devices with poly-Si gate electrodes. It was found that gate strain boosts performance without any detrimental effect on HCI or NBTI reliability, indicating MuGFET compatibility with strained silicon technology. The impact of fin width (W _fin) scaling was also investigated. HCI reliability improves with W _fin scaling, whereas NBTI reliability degrades with W _fin scaling. The same W _fin scaling trends were observed in both strained and unstrained devices.

Keywords

field effect transistors; hot carriers; semiconductor device reliability; MuGFET reliability; gate strain boosts performance; gate-induced strain; hot carrier injection reliability; multiple-gate field-effect transistors; negative bias temperature instability; strained silicon technology; tensile metal gate electrodes; Capacitive sensors; Degradation; Electrodes; FETs; Hot carrier injection; Human computer interaction; Negative bias temperature instability; Niobium compounds; Silicon; Titanium compounds; Hot carrier injection (HCI); multiple-gate field-effect transistor (MuGFET); negative bias temperature instability (NBTI); reliability; strained silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2000944

Filename

4571149