Title :
A Novel 2-Bit/Cell p-Channel Logic Programmable Cell With Pure 90-nm CMOS Technology
Author :
Chen, Ying-Je ; Huang, Chia-En ; Chen, Hsin-Ming ; Lai, Han-Chao ; Shih, J.R. ; Wu, Kenneth ; King, Ya-Chin ; Lin, Chrong-Jung
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
A new p-channel nitride-based one-time programmable (OTP) memory was developed for advanced-logic nonvolatile-memory (NVM) applications. A 0.296-mum2/bit (~35 F2) OTP cell, i.e., 0.592 mum2/cell, with a self-aligned nitride storage node was fabricated using standard 90-nm CMOS processes and is fully independent of gate oxide for high scalability. Additionally, the ultrahigh-density OTP cell exhibits excellent retention, immunity against disturbance, and a wide on/off window under the band-to-band hot electron programming. In summary, the new p-channel OTP cell is a very promising solution for use in high-density logic NVM applications beyond the 90-nm technology node.
Keywords :
CMOS logic circuits; CMOS memory circuits; programmable logic devices; random-access storage; CMOS technology; advanced-logic nonvolatile-memory; band-to-band hot electron programming; gate oxide; high-density logic NVM applications; one-time programmable memory; p-channel logic programmable cell; self-aligned nitride storage node; size 90 nm; ultrahigh-density OTP cell; word length 2 bit; CMOS logic circuits; CMOS process; CMOS technology; Electrons; Logic devices; Logic programming; Microelectronics; Nonvolatile memory; Scalability; Storage area networks; 2 bit/cell; Logic nonvolatile memory (NVM); nitride storage node; one-time programmable (OTP); p-channel; self-aligned nitride (SAN);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000969
