Title :
Drive Current Enhancement in Silicon-on-Quartz MOSFETs
Author :
Nakajima, Yoshikata ; Sasaki, Kenji ; Hanajiri, Tatsuro ; Toyabe, Toru ; Sugano, Takuo
Author_Institution :
Bio-Nano Electron. Res. Center, Toyo Univ., Saitama
Abstract :
We proposed the advantages of MOSFETs fabricated on silicon-on-quartz (SOQ) wafers over MOSFETs on silicon-on-insulator (SOI) wafers. We demonstrated by device simulation that ionized acceptors under a buried oxide (BOX) layer are eliminated in an SOI MOSFET with a BOX layer that is thick enough in an SOQ MOSFET, and carriers in the channel are induced more effectively by the gate electric field in SOQ MOSFETs than in SOI MOSFETs. Additionally, we confirmed experimentally the enhancement of induced carriers and its resultant improvement of the subthreshold characteristics and transconductance characteristics in SOQ MOSFETs.
Keywords :
MOSFET; buried layers; carrier mobility; SOI MOSFET; SOQ MOSFET; buried oxide layer; device simulation; drive current enhancement; gate electric field; silicon-on-insulator wafers; silicon-on-quartz MOSFET; silicon-on-quartz wafers; Educational programs; Educational technology; Germanium silicon alloys; Helium; Impurities; MOSFETs; National electric code; Silicon germanium; Silicon on insulator technology; Transconductance; Carriers; gate electric field; silicon-on-insulator (SOI); silicon-on-quartz (SOQ);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2001121
