High-Performance Polyimide-Based ReRAM for Nonvolatile Memory Application

Author

Liu, Sheng-Hsien ; Yang, Wen-Luh ; Wu, Chi-Chang ; Chao, Tien-Sheng ; Ye, Meng-Ru ; Su, Yu-Yuan ; Wang, Po-Yang ; Tsai, Ming-Jui

Author_Institution

Program of Electr. & Commun. Eng., Feng Chia Univ., Taichung, Taiwan

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

123

Lastpage

125

Abstract

In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between highand low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (>; 10⁵) and superior endurance (>; 10⁵ cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.

Keywords

integrated circuit reliability; random-access storage; thin films; DAXIN-PI thin film; PI-based resistive random access memory; Ron-Roff ratio; acceptable retention characteristics; charge transfer complex; electrochemical-metallization; fast switching speed; forming process; high-performance polyimide-based ReRAM; high-resistance states; low operation voltage; low-resistance states; nonvolatile memory application; reliability test; resistance layer; valence-change-based ReRAM; Electronic countermeasures; Metals; Nonvolatile memory; Polyimides; Resistance; Switches; Polyimide (PI); resistive random access memory (ReRAM) devices; sol–gel;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2224633

Filename

6365747