• DocumentCode
    813604
  • Title

    Measurement of the Neutron Energy Dependence of Base Current Degradation of a Silicon Bipolar Transistor

  • Author

    McKenzie, J.M. ; Witt, L.J.

  • Author_Institution
    Sandia Laboratories Albuquerque, New Mexico 87115
  • Volume
    20
  • Issue
    6
  • fYear
    1973
  • Firstpage
    341
  • Lastpage
    348
  • Abstract
    A measurement of the neutron energy dependence of base current of a small signal bipolar transistor is given. The theory of the method, the neutron radiation damage calibration and measurement, the neutron dosimetry, and an experiment to test the concepts and to obtain preliminary results are described.
  • Keywords
    Bipolar transistors; Current measurement; Degradation; Energy measurement; Gain measurement; Laboratories; Neutrons; Nuclear weapons; Semiconductor devices; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1973.4327417
  • Filename
    4327417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=813604