A Simple Transistor Neutron Hardness Screen Using Scattering Parameters

A frequency domain model of the common emitter S21 parameter of a junction transistor is derived which includes the effect of minority carrier transit time through the active device. Using this model it is demonstrated that the minority carrier transit time can be measured using scattering parameters. S-parameter derived transit time is used to predict neutron induced gain degradation. A prediction accuracy of approximately 5% is demonstrated.