• DocumentCode
    813627
  • Title

    A Simple Transistor Neutron Hardness Screen Using Scattering Parameters

  • Author

    Tausch, H.J. ; Antinone, R.J. ; Bailey, R.A.

  • Author_Institution
    Air Force Weapons Laboratory Kirtland AFB, New Mexico 87117
  • Volume
    20
  • Issue
    6
  • fYear
    1973
  • Firstpage
    361
  • Lastpage
    369
  • Abstract
    A frequency domain model of the common emitter S21 parameter of a junction transistor is derived which includes the effect of minority carrier transit time through the active device. Using this model it is demonstrated that the minority carrier transit time can be measured using scattering parameters. S-parameter derived transit time is used to predict neutron induced gain degradation. A prediction accuracy of approximately 5% is demonstrated.
  • Keywords
    Capacitance; Degradation; Doping profiles; Equations; Frequency dependence; Frequency response; Instruments; Neutrons; Scattering parameters; Space charge;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1973.4327420
  • Filename
    4327420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=813627