• DocumentCode
    813669
  • Title

    The Performance of Injection Locked Impatt Oscillators under Transient Ionizing Radiation

  • Author

    Gutmann, R.J. ; Borrego, J.M. ; Cottrell, P.E. ; Ghandhi, S.K.

  • Author_Institution
    Electrophysics and Electronic Engineering Division Rensselaer Polytechnic Institute Troy, New York 12181
  • Volume
    20
  • Issue
    6
  • fYear
    1973
  • Firstpage
    388
  • Lastpage
    391
  • Abstract
    The performance of 500 milliwatt X-band injection locked IMPATT oscillators, exposed to 100 nanosecond pulses of 10 MeV electrons at dose rates between 1 × 108 and 3 × 109 rads/sec, is compared to free running IMPATT oscillators. The RF power reduction during the radiation pulse remained the same for the locked and free running oscillators, while the RF frequency shift depended upon the power of the locking signal. The locking figure of merit remained constant over the range of dose rates used, and original RF performance was regained within 50 nanoseconds following the radiation pulse.
  • Keywords
    Detectors; Diodes; Injection-locked oscillators; Ionizing radiation; Phase detection; Pulse measurements; RF signals; Radio frequency; Spectral analysis; Thermistors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1973.4327424
  • Filename
    4327424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=813669