• DocumentCode
    813962
  • Title

    Matching properties of linear MOS capacitors

  • Author

    Singh, Rajinder ; Bhattacharyya, A.B.

  • Author_Institution
    Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi, India
  • Volume
    36
  • Issue
    3
  • fYear
    1989
  • fDate
    3/1/1989 12:00:00 AM
  • Firstpage
    465
  • Lastpage
    467
  • Abstract
    Various random error mechanisms which affect the matching of MOS capacitors have been studied in a systematic manner. For the dimensions and technology considered, normalized random error in capacitor-ratio has been observed to have an inverse square-root dependence on the capacitor-area, a linear dependence on the perimeter-to-area ratio, and a very weak dependence, n/sup 16/, on the capacitor-ratio n. Increasing the intercapacitor gap slows down its dependence on n.<>
  • Keywords
    capacitors; metal-insulator-semiconductor devices; capacitor-area; capacitor-ratio; intercapacitor gap; inverse square-root dependence; linear MOS capacitors; matching; normalized random error; perimeter-to-area ratio; random error mechanisms; Artificial intelligence; Capacitance measurement; Degradation; Design methodology; Dielectrics; Filters; Geometry; MOS capacitors; Switching converters; Testing;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0098-4094
  • Type

    jour

  • DOI
    10.1109/31.17600
  • Filename
    17600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=813962