DocumentCode
813973
Title
Roles of corners in matching of linear MOS capacitors
Author
Singh, Rajinder ; Bhattacharyya, A.B.
Author_Institution
Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi, India
Volume
36
Issue
3
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
467
Lastpage
469
Abstract
Statistically highly significant improvement in matching MOS capacitors has been observed for a cornerless structure in which photolithographically defined corners are avoided. For the considered dimensions and technology, the improvement in matching is by a factor of two. This amounts to an economy of the silicon area by a factor of four in switched-capacitor, A/D (analog-to-digital), and D/A converter applications
Keywords
analogue-digital conversion; capacitors; digital-analogue conversion; metal-insulator-semiconductor devices; switched capacitor networks; A/D convertor; D/A converter; cornerless structure; corners; linear MOS capacitors; matching; photolithographically defined corners; switched-capacitor; CMOS process; CMOS technology; Circuit testing; Circuits and systems; Degradation; Dielectrics; Geometry; MOS capacitors; Silicon; Switching converters;
fLanguage
English
Journal_Title
Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0098-4094
Type
jour
DOI
10.1109/31.17601
Filename
17601
Link To Document