Temperature measurement of metal-coated silicon wafers by double-pass infrared transmission

Author

Cullen, Charles W. ; Sturm, James C.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

8

Issue

3

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

346

Lastpage

351

Abstract

We report the measurement of the temperature of metal-coated silicon wafers by a double-pass infrared transmission technique. Infrared light incident on the backside of the wafer passes through the wafer, and is re-emitted out the backside after reflecting off the metal surface on the front side of the wafer. The temperature is inferred by the change in the re-emitted signal due to absorption in the wafer. The work has been demonstrated on double-polished wafers from 100°C to 550°C using wavelengths from 1.1 to 1.55 μm. A method for overcoming limitations of the present arrangement for wafers with a rough backside is proposed

Keywords

elemental semiconductors; infrared spectroscopy; integrated circuit manufacture; rapid thermal processing; silicon; spectral methods of temperature measurement; 1.1 to 1.55 mum; 100 to 550 C; IC manufacture; IR absorption; RTP reactor; Si; double-pass infrared transmission; double-polished wafers; metal surface reflection; metal-coated Si wafers; process control; re-emitted signal change; rough backside; temperature measurement; Electromagnetic wave absorption; Integrated circuit measurements; Interference; Lamps; Optical scattering; Optical surface waves; Silicon; Temperature dependence; Temperature measurement; Wavelength measurement;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.401012

Filename

401012