DocumentCode :
814109
Title :
Using wavelength-dependent emissivity of semiconductor wafer to model heat transfer in rapid thermal processing station
Author :
Belikov, Sergey ; Martynov, Helen ; Kaplinsky, Michael ; Manikopoulos, Constantine
Author_Institution :
Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
Volume :
8
Issue :
3
fYear :
1995
fDate :
8/1/1995 12:00:00 AM
Firstpage :
360
Lastpage :
362
Abstract :
This paper develops an approach for using a wavelength-dependent emissivity model of a semiconductor wafer in calculating heat transfer in a rapid thermal processing (RTP) station. The wafer emissivity is modeled by a generalized polynomial in wavelength where the coefficients may be functions of temperature. A comparison of experimental data with simulated results for a silicon wafer is provided
Keywords :
approximation theory; emissivity; heat transfer; polynomials; rapid thermal processing; semiconductor process modelling; temperature distribution; 1000 to 1400 K; Si; Si wafer; generalized polynomial; heat transfer model; rapid thermal processing station; semiconductor wafer; simulation; wafer spectral emissivity; wafer temperatures; wavelength-dependent emissivity; Control systems; Heat transfer; Heating; Lamps; Rapid thermal processing; Semiconductor device modeling; Silicon; Temperature control; Temperature measurement; Temperature sensors;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.401015
Filename :
401015
Link To Document :
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