DocumentCode
814118
Title
Investigation of the thermal behavior of a RTP furnace
Author
Henda, R. ; Scheid, E. ; Bielle-Daspet, D.
Author_Institution
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Volume
8
Issue
3
fYear
1995
fDate
8/1/1995 12:00:00 AM
Firstpage
362
Lastpage
365
Abstract
The results of a full model accounting for the thermal behavior of a commercially available rapid thermal processing furnace are given. In particular, emphasis has been placed on achieving a flat temperature profile over the wafer. System parameters allowing RTP equipment to be improved are reviewed
Keywords
rapid thermal processing; semiconductor process modelling; temperature distribution; RTP equipment improvement; RTP furnace; Si; Si wafer; flat temperature profile; lamp contouring; physical based thermal model; radiation shielding; rapid thermal processing; readsorbed energy distribution; temperature distribution; thermal behavior; transient wafer temperature uniformity; wafer temperature profile; Furnaces; Inductors; Lamps; Optical films; Rapid thermal processing; Semiconductor device modeling; Silicon; Steel; Temperature control; Thermal conductivity;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.401016
Filename
401016
Link To Document