Title :
Performance of 1-10-GHz traveling wave amplifiers in 0.18-μm CMOS
Author :
Frank, B.M. ; Freundorfer, A.P. ; Antar, Y.M.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, Ont., Canada
Abstract :
The authors present two four-stage traveling-wave amplifiers (TWA) fabricated in a 0.18-μm CMOS process. A TWA with an internal drain bias network achieved a gain of 5 dB out to 10 GHz, and another TWA without an on-chip bias network achieved a gain of 8 dB out to 10 GHz. These are the highest frequency CMOS TWAs known to the authors.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; integrated circuit design; travelling wave amplifiers; wideband amplifiers; 1 to 10 GHz; 5 dB; 8 dB; CMOS process; four-stage TWA; internal drain bias network; traveling-wave amplifiers; Broadband amplifiers; CMOS process; CMOS technology; Circuit topology; Frequency; Gain; Impedance; MOSFETs; Microwave technology; Network-on-a-chip;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2002.803194
