Title :
High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
Author :
Liu, H.Y. ; Childs, D.T. ; Badcock, T.J. ; Groom, K.M. ; Sellers, I.R. ; Hopkinson, M. ; Hogg, R.A. ; Robbins, D.J. ; Mowbray, D.J. ; Skolnick, M.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
fDate :
6/1/2005 12:00:00 AM
Abstract :
The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-μm multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm2 for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical multilayers; quantum dot lasers; reflectivity; 1 mm; 1.3 mum; 1.5 mA; 100 mW; 2 mm; 293 to 298 K; GaAs spacer layers; InAs-GaAs; InAs-GaAs lasers; cleaved facets; coated facets; continuous-wave threshold currents; high-growth-temperature spacer; high-performance lasers; high-reflectivity facets; multiplayer quantum-dot lasers; room-temperature threshold currents; three-layer quantum-dot lasers; threshold current densities; very low threshold currents; Councils; Gallium arsenide; Land surface temperature; Nonhomogeneous media; Power generation; Quantum dot lasers; Semiconductor diodes; Semiconductor lasers; Stationary state; Threshold current; Epitaxial growth; quantum dots (QDs); semiconductor diodes; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.846948
