Title :
Analysis of the source inductance effect on the power performance of high development HEMTs in the Ka-Band
Author :
Gaquiere, C. ; Bonte, B ; Théron, D. ; Crosnier, Y. ; Favre, J
Author_Institution :
CNRS, Inst. d´´Electron et de Microelectron. du Nord, Villeneuve d´´Ascq, France
fDate :
8/1/1995 12:00:00 AM
Abstract :
This paper provides an analysis of the power performance degradations of interdigitated HEMTs in millimeter wave range as the total gate width increases. It investigates the possibility of optimizing the device topology by combining a limited number of via holes and airbridge source connections in order to offer a good cost-performance trade off
Keywords :
S-parameters; inductance; millimetre wave field effect transistors; millimetre wave measurement; millimetre wave power transistors; power HEMT; power field effect transistors; Ka-Band; airbridge source connections; cost-performance trade off; device topology; interdigitated HEMT; millimeter wave range; power performance; source inductance effect; total gate width; via holes; Bridge circuits; Degradation; Fingers; Frequency; HEMTs; Inductance; MODFETs; Millimeter wave communication; Millimeter wave technology; Performance analysis;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
